Samsung unveils PRAM

It looks like the current generation of non-volatile memory are on its last legs as Samsung lifts the veil on the next generation, dubbed the PRAM. PRAM is an acronym for Phase-change Random Access Memory and the first prototype features 512Mbit capacity. It will combine the strength of standard RAM’s superior processing speed with the non-volatile features of flash memory. Since PRAM is able to rewrite data without erasing previously accumulated data, it is theoretically 30 times faster than current flash memory. Commercial availability of the PRAM is slated for a 2008 release. PRAM can also be a play on the words Perfect RAM, and we will leave the rest to your imagination.