Hynix Semiconductor Develops 2Gb Mobile DRAM

Hynix Semiconductor has successfully developed 2Gb mobile DRAM chips via 54nm process technology, capable of hitting a maximum operating speed of 400Mbps at 1.2V power supply and is able to process up to 1.6 gigabytes per second with a 32-bit I/O. This new mobile DRAM is also on par with the JEDEC standard, making it suitable for use in next-generation MID (Mobile Internet Device) and UMPC (ultra mobile PC) devices. Mass production of this new mobile DRAM will begin in the first half of next year onwards.