Samsung 512GB solid state drive relies on toggle mode DDR NAND flash memory

Samsung has just announced that they will be rolling out a spanking new 512GB solid state drive that will rely on high performance toggle-mode DDR NAND flash memory. Inside, you will find a 30nm-class 32 gigabit chip that entered production in November last year, where the chip can operate at either 3.3V or 1.8V. Basically, that translates to it featuring a higher level of performance without consuming any more juice compared to its predecessors that are 16 gigabit NAND-based SSDs. This new drive is able to hit a maximum sequential read speed of 250MB per second and a 220MB per second sequential write speed when paired with a SATA II interface. Samsung hopes to see these new SSDs hit high-end notebooks when production commences next month. There was no word on pricing information, but it ought to make an appearance before the year is over.

This article was filed in Homepage > Computers and was tagged with flash memory, Samsung, ssd and Storage.
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