While it just started mass producing the 14nm FinFET chipsets, and showcasing the 10nm FinFET semiconductor technology at the Solid State Circuits Conference (ISSCC) in San Francisco this week, Samsung has outdone itself again by confirming that the Korean company has all the backbone to create chipsets to be as small as 5nm.
According to Samsung’s Kinam Kim, who confirmed “There are no fundamental difficulties until 5nm’. Furthermore, the Korean company has begun finding ways to shrink things even further to an insane 3.25nm level.
But before 3.25nm, the question was already raised by many in the conference as to what material will Samsung use to fabricate these chipsets? Intel has hinted during the same conference that silicon is not a viable option for chipsets below 7nm. Apparently, Intel itself has plan to use Indium Gallium Arsenide (InGaAs) to make chipsets with transistor size of 7nm and below.
But Samsung remained mum, holding on to their trade secret.
What we know is Samsung has already planned in using the 14nm FinFET technology based Exynos 7 processor for all of its upcoming smartphones and tablets; for example the Galaxy S6, which will take full advantage of the company’s first 14nm chipsets.
Samsung had been heavily investing in its semiconductor business to try competing with Qualcomm and Intel.