Infineon Technologies AG has partnered with FOXESS, a prominent player in the green energy sector, to enhance the efficiency and power density of energy storage applications. Infineon will supply its advanced power semiconductor devices to FOXESS, facilitating the development of innovative solutions in the green energy industry.

Specifically, Infineon will provide FOXESS with its CoolSiC MOSFETs 1200 V for industrial energy storage applications, along with EiceDRIVER gate drivers. Additionally, FOXESS’ string PV inverters will utilize Infineon’s IGBT7 H7 1200 V power semiconductor devices.

FOXESS’ H3PRO energy storage series uses Infineon’s CoolSiC MOSFETs 1200 V.

As the global market for photovoltaic energy storage systems (PV-ES) continues to expand rapidly, improving power density has become crucial for success. Infineon’s power semiconductor devices, including CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series, incorporate state-of-the-art semiconductor technologies tailored to industrial applications, addressing the growing demand for efficiency and power density in energy storage applications.

Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure at Infineon Technologies Greater China, expressed pride in collaborating with FOXESS to drive decarbonization through higher power density and more reliable systems for PV-ES applications.

FOXESS’ R Series redefines the overall design of the 100 kW model by using Infineon’s IGBT7 H7 series.

Mr. Zhu Jingcheng, Chairman of FOXESS, highlighted the significant improvements in product reliability and efficiency achieved through the support of Infineon’s advanced components. He emphasized Infineon’s technical expertise and product quality as key factors strengthening FOXESS’ competitiveness and market presence.

Infineon’s CoolSiC MOSFETs 1200 V offer high power density, reducing losses by 50 percent and providing additional energy without increasing battery size. FOXESS’ H3PRO 15 kW-30 kW energy storage series, equipped with Infineon’s CoolSiC MOSFETs, has achieved remarkable efficiency and sales growth in the global market.

Similarly, Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V series enhances the overall efficiency and power density of inverters. By leveraging Infineon’s advanced power semiconductor devices, FOXESS has optimized the design of its R Series 75-110 kW industrial and commercial model, achieving outstanding efficiency of up to 98.6 percent.

Infineon offers a comprehensive range of EiceDRIVER gate drivers, ensuring great integration with all power devices, including CoolSiC and IGBTs, simplifying design processes, and enhancing system reliability.

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