Samsung has announced today that it is now mass producing the industry’s first ever 128-gigabyte (GB) ultra-fast embedded memory based on the much-anticipated Universal Flash Storage (UFS) 2.0 standard for next-generation flagship smartphones. The new embedded memory’s UFS 2.0 interface is said to be the most advanced JEDEC-compliant, next-generation flash memory storage specification currently in the market.
Through ‘Command Queue’; the technology that UFS memory uses to accelerates the speed of command execution in SSDs through a serial interface has significantly increased data processing speeds compared to the 8-bit parallel-interface-based eMMC standard. Results, Samsung UFS memory conducts random reading at 2.7 times faster (19,000 input/output operations per second (IOPS)) than the most common embedded memory for high-end smartphones available today, the eMMC 5.0.
In addition to a 50 percent decrease in energy consumption, it also delivers a sequential read and write performance boost up to SSD levels with its random read speed 12 times faster than that of a standard high-speed memory card (which runs at 1,500 IOPS), and is expected to greatly improve system performance. As for random writing it is clocked at 14,000 IOPS which is 28 faster than conventional external memory card,
Samsung anticipates that UFS will support all future high-end mobile market needs, while eMMC solution are kept for the mid-market, value products.
The three version of the Samsung’s new UFS embedded memory are: 128GB, 64GB and 32GB versions. Currently, eMMC line-up produce only half of it.
In an attempt to provide more design flexibility to global customers, Samsung’s UFS embedded memory package, a new ePoP (embedded package on package) solution, can be stacked directly on top of a logic chip, taking approximately 50 percent less space.
Samsung has already planned ahead for the next several years, continuing its pace on the memory solution endeavor, combining truly high-performance with high capacity.