Samsung’s component business has been exhibiting stellar performance over the past couple of years and the company doesn’t intend to slow down any time soon. Today Samsung Electronics announced that it has started mass producing the industry’s first “through silicon via” (TSV) 128GB DDR4 memory modules for enterprise servers and data centers.

It was only last year when TSV DDR4 DRAM modules in 64GB were introduced by Samsung, the latest product promises significantly improved performance coupled with power efficiency to make for a compelling package for enterprise clients.

Samsung says that its new TSV DRAM module has the largest capacity and highest energy efficiency of any DRAM module available today, it promises operation at high speed with excellent reliability. The 128GB TSV DDR4 module is made out of a total of 144 DDR4 chips that are arranged in 36 4GB packages, each individual package has four 20-nanometer 8GB chips that have been assembled using Samsung’s TSV packaging technology.

What it does is that instead of interconnecting die stacks using wire bonding like in conventional chip packages, the chip dies are first finely ground and then pierced with fine holes and vertically connected by electrodes passing through the holes. This boosts signal transmission and when coupled with the module’s special design it optimizes module power consumption and performance.

Samsung recognizes the need for ultra-high capacity DRAM and it’s accelerating the production of TSV technology to further improve manufacturing productivity.

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