Samsung 512GB solid state drive relies on toggle-mode DDR NAND flash memory

Samsung has just announced that they will be rolling out a spanking new 512GB solid state drive that will rely on high performance toggle-mode DDR NAND flash memory. Inside, you will find a 30nm-class 32 gigabit chip that entered production in November last year, where the chip can operate at either 3.3V or 1.8V. Basically, that translates to it featuring a higher level of performance without consuming any more juice compared to its predecessors that are 16 gigabit NAND-based SSDs. This new drive is able to hit a maximum sequential read speed of 250MB per second and a 220MB per second sequential write speed when paired with a SATA II interface. Samsung hopes to see these new SSDs hit high-end notebooks when production commences next month. There was no word on pricing information, but it ought to make an appearance before the year is over.


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